On Sep 6, 1960, the Institute of Semiconductors, CAS was founded in Beijing.
The institute has fabricated the first material/device/circuit in mainland China as follows:
The first silicon single crystal, and various monocrystalline silicon slices and epitaxial wafers that are needed in the integrated circuits;
The first high-purity GaAs single crystal, and the monocrystalline slices that are needed in semiconductor lasers;
The first epitaxial wafer, and quantum well, superlattice materials;
The first integrated circuit of transistor, high-frequency transistor, and silicon planar transistor;
The first MOS field effect transistor;
The first 1 MHz transistor sampling oscilloscope;
The first Si, GaAs variable capacitance diode, snap off diode and the other microwave devices, and a variety of novel circuits; the microwave beacon used in the first artificial satellite;
The first solar cell;
The first semiconductor refrigerator.
The institute has made important contributions to China’s economic development and national defense construction, and to make China’s semiconductor science and technology take a place in the international science and technology fields, in China’s different historical periods.