Jiang, Yu; Tan, Manqing; You, Daoming; Li, Wenqing; Zhao, Yali; Guo, Wentao Source: SSRN, June 28, 2024; ISSN: 15565068; DOI: 10.2139/ssrn.4879907; Repository: SSRN

Author affiliation:

State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China

Abstract:

Currently, blue and white light-emitting diodes (LEDs), widely utilized in various devices, emit blue light (approximately 400-515 nm) with relatively high intensity. To mitigate potential ocular hazards posed by blue light, we have developed Ti-doped SiNx blue-light-blocking films and analyzed their blue light-blocking mechanism based on the structure, composition, and optical properties of the films. Furthermore, the phenomenon of luminescence under violet and ultraviolet light exposure has been observed, indicating their capability to absorb and convert short-wavelength light. The influence of Ti content and film thickness on blue-light-blocking effectiveness was examined. By measuring the blue-light-blocking rate of the films through a spectrometer, the Ti-doped SiNx film with a thickness of about 480 nm and a Ti content of 11.36% can block more than 99% of the blue light emitted by commercial white LEDs and mobile phones. Additionally, we have investigated the scratch resistance properties of the films and revealed excellent scratch resistance. Given their excellent blue light protection and scratch resistance, the films have significant potential for blue-light-blocking applications and as protective coatings for electronic devices.