Liang, Yan; Zhou, Wenguang; Su, Xiangbin; Li, Nong; Chang, Faran; Xie, Ruoyu; Yu, Hongguang; Shi, Janmei; Li, Chuanbo; Hao, Hongyue; Yang, Chengao; Wang, Guowei; Jiang, Dongwei; Wu, Donghai; Niu, Zhichuan; Zheng, Youdou; Xu, Yingqiang; Shi, Yi Source: Optics Express, v 32, n 13, p 23822-23830, June 17, 2024; E-ISSN: 10944087; DOI: 10.1364/OE.528762; Publisher: Optica Publishing Group (formerly OSA)

Author affiliation:

School of Electronic Science and Engineering Nanjing University, Jiangsu, Nanjing; 210093, China

Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China

School of Science, Minzu University of China, Beijing; 100081, China

Abstract:

A bias-selectable near-infrared (NIR) and extended short wavelength infrared (eSWIR) dual-band bandgap engineered Ga0.51As0.49Sb/Al0.85Ga0.15AsSb/T2SL (In0.53Ga0.47 As/Ga0.51As0.49Sb) infrared photodetector, vertically stacked in a monolithic grown on InP substrate, is demonstrated. GaAsSb NIR sub-detector and T2SL eSWIR sub-detector are operated under small forward and reverse bias, respectively. The GaAsSb sub-detector functions within the NIR spectrum, with a 100% cutoff wavelength of 1.72 µm at 50 mV, achieving a peak responsivity of 0.560 A/W at 1.55 µm and a specific detectivity (D*) of 1.48 × 10 cm·Hz//W. At -250 mV, the T2SL eSWIR sub-detector functions in the eSWIR band, exhibiting a 100% cutoff wavelength of 2.6 µm. The peak responsivity is 0.273 A/W at 2.0 µm, with a specific detectivity of 6.11 × 10 cm·Hz//W. The present work demonstrates the potential of the dual-band photodetector for multispectral SWIR applications.