Li, Jian; Jiang, Chen; Liu, Hao; Zhang, Yang; Zhai, Hao; Wei, Xin; Wang, Qi; Wu, Gang; Li, Chuanchuan; Ren, Xiaomin
Source: Advanced Photonics Research, 2024; E-ISSN: 26999293; DOI: 10.1002/adpr.202300348; Publisher: John Wiley and Sons Inc
Articles not published yet, but available online Article in Press
Author affiliation:
Institute of Semiconductors, Chinese Academy of Science, Beijing; 100083, China
College of Materials Science and Opto-Electronic Technology, University of Academy of Sciences, Beijing; 100049, China
State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing; 100876, China
BUPT-HTGD Joint Laboratory of Quantum Optoelectronics and Bivergentum Theory, Beijing; 100876, China
Abstract:
A silicon-based room temperature (RT) continuous wave (CW) operation quantum well (QW) laser emitting at 850 nm is reported in this article. By applying the dislocation filter superlattice, the threading dislocation density of the GaAs pseudosubstrate on Si is reduced to 1.8 × 10 cm. The metal-organic chemical vapor deposition-grown laser structure with GaAs/GaAsP QW and InAlAs active region dislocation blocking layer are fabricated into broad-stripe Fabry–Perot laser diodes. A typical threshold current and threshold current density of 286 mA and 715 Acm are obtained with 2 mm cavity length and 20 um stripe width samples. A 94.2 mW single-facet output power lasing around 854 nm and a 0.314 WA slope efficiency is measured under RT CW operation. After a 10-min aging process, the tested laser can operate stably under continuous operation conditions at RT and the lifetime can be approximated using an exponential fitting curve, indicating a good life reliability of this QW laser.