Deng, Zhi; Wang, Hailong; Wei, Qiqi; Liu, Lei; Sun, Hongli; Pan, Dong; Wei, Dahai; Zhao, Jianhua Source: Journal of Semiconductors, v 45, n 1, January 2024;

Abstract:

(Ga,Fe)Sb is a promising magnetic semiconductor (MS) for spintronic applications because its Curie temperature (T C) is above 300 K when the Fe concentration is higher than 20%. However, the anisotropy constant K u of (Ga,Fe)Sb is below 7.6 × 10 erg/cm when Fe concentration is lower than 30%, which is one order of magnitude lower than that of (Ga,Mn)As. To address this issue, we grew Ga1-x-yFexNiySb films with almost the same x (≈24%) and different y to characterize their magnetic and electrical transport properties. We found that the magnetic anisotropy of Ga0.76-yFe0.24NiySb can be enhanced by increasing y, in which K u is negligible at y = 1.7% but increases to 3.8 × 10 erg/cm at y = 6.1% (T C = 354 K). In addition, the hole mobility (μ) of Ga1-x-yFexNiySb reaches 31.3 cm/(V？s) at x = 23.7%, y = 1.7% (T C = 319 K), which is much higher than the mobility of Ga1-xFexSb at x = 25.2% (μ = 6.2 cm/(V？s)). Our results provide useful information for enhancing the magnetic anisotropy and hole mobility of (Ga,Fe)Sb by using Ni co-doping.

？ 2024 Chinese Institute of Electronics. (27 refs.)