Author(s): Yu, SX (Yu, Shaoxin); Shao, WH (Shao, Weiheng); Gao, PX (Gao, Pei-Xiong); Li, X (Li, Xiang); Chen, RS (Chen, Rongsheng); Zhao, B (Zhao, Bin)

Source: IET CIRCUITS DEVICES & SYSTEMS Volume: 2023  Article Number: 5298361  DOI: 10.1049/2023/5298361  Published: OCT 31 2023 

Abstract: In this work, the effects of the mini-local oxidation of silicon (LOCOS) field plate's bottom physical profile on the devices' breakdown performance are analyzed through technology computer-aided design simulations. It is indicated that the "abrupt" bottom profile could certainly do with an optimization. This paper introduces an effective process improvement method by etching bias power adjustment and time reduction. The upgradation of the field plate physical profile has been proved by transmission electron microscope cross-section analysis. The angle for the bottom surface of mini-LOCOS field plate theta 2 is improved from 11.9 degrees to 12.6 degrees, and the thickness ratio of Hup/Hbottom (field plate oxide thickness for the upper and bottom, respectively) is increased from 71.8% to 76.6%. Finally, the optimized laterally diffused metal oxide semiconductor devices have been fabricated, and both figure of merit curves and safe operation area curves are measured. The specific on-resistance Ron,sp could achieve as low as 11.3 m omega mm2, while breakdown voltage BVds,max arrives at 37.4 V, which is nearly 19.3% improved.

Accession Number: WOS:001152557200001

Author Identifiers:

Author Web of Science ResearcherID     ORCID Number

Shao, Weiheng       0000-0002-7345-3479

ISSN: 1751-858X

eISSN: 1751-8598