Author(s): Zhang, S (Zhang, Shan); Wang, ZC (Wang, Zhichuan); Pan, D (Pan, Dong); Wang, ZY (Wang, Zhaoyu); Li, ZL (Li, Zonglin); Zhang, ZT (Zhang, Zitong); Gao, YC (Gao, Yichun); Cao, Z (Cao, Zhan); Zhang, G (Zhang, Gu); Liu, L (Liu, Lei); Wen, LJ (Wen, Lianjun); Zhuo, R (Zhuo, Ran); Liu, DE (Liu, Dong E.); He, K (He, Ke); Shang, RN (Shang, Runan); Zhao, JH (Zhao, Jianhua); Zhang, H (Zhang, Hao)

Source: PHYSICAL REVIEW B Volume: 108 Issue: 23  Article Number: 235416  DOI: 10.1103/PhysRevB.108.235416  Published: DEC 12 2023 

Abstract: Electron interactions in quantum devices can exhibit intriguing phenomena. One example is assembling an electronic device in series with an on-chip resistor. The quantum laws of electricity of the device are modified at low energies and temperatures by dissipative interactions induced by the resistor, a phenomenon known as the dynamical Coulomb blockade (DCB). The DCB strength is usually nonadjustable in a fixed environment defined by the resistor. Here, we design an on-chip circuit for InAs-Al hybrid nanowires where the DCB strength can be gate-tuned in situ. InAs-Al nanowires could host Andreev or Majorana zero-energy states. This technique enables tracking the evolution of the same state while tuning the DCB strength from weak to strong. We observe the transition from a zero-bias conductance peak to split peaks for Andreev zero-energy states. Our technique opens the door to in situ tuning interaction strength on zero-energy states.

Accession Number: WOS:001141833400007

Author Identifiers:

Author Web of Science ResearcherID     ORCID Number

Zhang, Hao P-6220-2017       

Cao, Zhan       0000-0002-6613-6870

ISSN: 2469-9950

eISSN: 2469-9969