Author(s): Wang, XY (Wang, Xiaoyu); Long, HR (Long, Haoran); Yu, YL (Yu, Yali); Zhou, ZQ (Zhou, Ziqi); Yang, JH (Yang, Juehan); Liu, YY (Liu, Yue-Yang); Liu, LY (Liu, Liyuan); Wei, ZM (Wei, Zhongming)
Source: IEEE ELECTRON DEVICE LETTERS Volume: 43 Issue: 11 Pages: 1925-1928 DOI: 10.1109/LED.2022.3210957 Published: NOV 2022
Abstract: For low-dimensional materials, the in-plane anisotropy of their structure can realize the detection of polarized light. This characteristic can be utilized to fabricate polarization-sensitive photodetectors without polarizers. It is conductive to the miniaturization and integration of devices. As a typical IV-VI group material, GeSe is easy to be synthesized by chemical vapor transport method, and has obvious response to the light in the visible and near-infrared band. In this study, a GeSe-based polarization-sensitive photodetector was fabricated. The sensitivity of GeSe to the polarization angle of light in the visible and near-infrared bands was explored. And a program was used to perform large-scale imaging. The polarized light response in the visible and near-infrared bands was compared and analyzed by artificial neural network.
Accession Number: WOS:000876041700037
Author Identifiers:
Author Web of Science ResearcherID ORCID Number
wei, zhong ming 0000-0002-6237-0993
Liu, Yue-Yang 0000-0001-6508-4215
ISSN: 0741-3106
eISSN: 1558-0563