Authors: Qi, TT; Guo, J; Hao, RT; Liu, Y; Chang, FR; Jiang, Z; He, XW; Jiang, DW; Wang, GW; Xu, YQ; Niu, ZC
OPTICAL AND QUANTUM ELECTRONICS
Volume: 51 Issue: 9 Published: SEP 2019 Language: English Document type: Article
DOI: 10.1007/s11082-019-1988-4
Abstract:
High performance InAs/GaSb superlattices for long-wavelength infrared detection were grown on a 4-in. GaSb wafer using molecular beam epitaxy. The influence of the growth temperature, V/III BEP ratio on the surface morphology and microstructure was researched. The good uniformity of the surface roughness and crystallization at four location along the radial direction on the wafer was obtained by balancing the inner and outer growth temperature. The performance deviation of the four photodiodes fabricated using the superlattices from center to edge on the wafer was below 20% which revealed the uniformity of the superlattice growth and the fabrication process. The 50% cutoff wavelength was about 12 mu m. The peak responsivity was 2.54 A/W corresponding to a quantum efficiency of 35.1% at 77 K. The zero bias differential resistance-area product (R(0)A) was 2.1 omega cm(2) due to the barrier structure design which restrains the diffusion dark current. The calculated Johnson noise limited detectivity was 5.75 x 10(10) cm root Hz/W at 10 mu m and 4.13 x 10(10) cm root Hz/W at 14 mu m.
Full Text: https://link.springer.com/article/10.1007/s11082-019-1988-4