Speaker: Prof. Wei Du (Department of Electrical Engineering and Physics, Wilkes University, Wilkes-Barre, Pennsylvania 18766, USA)

 

Time: Nov. 4, 2019 10:00AM 

 

Venue: Academic Conference Center, IOS, CAS  

 

Abstract: Over the past few decades, tremendous efforts for broadening the reach of current Si technology have been directed to build integrated photonics. Recently, GeSn/SiGeSn technique has gained dramatically increased attention particularly in the area of integrated mid-infrared photonics. The group-IV GeSn alloy has been demonstrated to become direct bandgap material with more than 8% Sn incorporation, which opens a new opportunity towards a Si-based light source with fully complementary metal-oxide-semiconductor (CMOS) compatibility. The GeSn laser contributes strongly to the progress of optoelectronic integration towards next-generation photonic integrated circuit on the Si platform, as it fills the deficiency of the efficient group-IV band-to-band lasers. In this report, the following aspects are presented: i) the novel growth strategy to obtain high-quality material with high Sn composition; ii) the demonstration of GeSn optically pumped heterostructure and quantum well lasers; and iii) the investigation of the feasibility of photonic integration.

 

Bibliography：Prof. Wei Du holds Bachelor of Science in Physics from Peking University, China in 2003, and Ph.D. degree from Institute of Semiconductors, Chinese Academy of Sciences in 2008. From 2008 to 2017, he was a research scholar with Arizona State University, Shizuoka University in Japan, Washington State University and University of Arkansas. His research projects in the area of: (a) Si Photonics, to develop the discrete device as well as explore the integration solutions. Research projects range from fundamental material growth study to high-performance devices development; (b) Nanotechnology, to develop the nano-scale devices to explore the novel device characteristics.