Biography：Qing Zhang is an associate professor at School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore. Currently, his research interests are mainly in the physical properties and electronic devices of carbon nanotube/graphene and some other 1-D and 2-D nanostructures. With his group, he is studying (1) controllable assembly, patterning and alignment of carbon nanotubes/graphene for electronic devices; (2) influences of chemical functionalizations on the electrical properties of carbon nanotubes /graphene; (3) the physical properties of 1-D and 2-D nanostructures, such as carbon nanotubes, graphene, Si and WO3 nanowires, monolayer MoS2, mica, etc; (4) energy storage capacities of Li-ion batteries with carbon nanotubes/ graphene as additives, etc. Most of his major findings and achievements have been captured in his more than 200 papers published in international peer-reviewed journals. His new book titled “Carbon Nanotubes and Their Applications” (ISBN: 978-981-4241-90-8) has been issued very recently.
The 186th:Nanoelectronic Devices Based 1-D and 2-D Materials
Date:
From:15:30 pm, Jan. 15, 2013
Title:Nanoelectronic Devices Based 1-D and 2-D Materials
Speaker: Qing Zhang (Nanyang Technological University, Singapore)
Time:15:30 pm, Jan. 15, 2013
Venue:Academic Salon Room, Institute of Semiconductors, CAS
Abstract:In this talk, I shall summarize the recent progress in nanodevices/nanomaterials in my group. For individual CNT based devices, I shall discuss CNT based NH3 gas sensing mechanisms. We suggest that the Schottky barrier modulation at the contacts is the dominant mechanism from room temperature to 150 °C. At higher temperatures, the charge transfer process contributes to the response signals. We have demonstrated complementary inverters, NOR, NAND, OR, AND logic gates integrated from high performance p- and n-type CNT-NET-FETs. A ring oscillator constructed from five inverters demonstrates the capability of driving multistage logic gates.For the first time, a semiconducting-to-metallic SWCNT transition upon dichlorocarbene functionalization is observed. Interestingly, the transition is reversible upon thermal annealing under ambient conditions.In addition, I shall briefly mention our recent activities, such as unipolar graphene p- and n-type FETs and logic inverters, the physical properties of MoS2, mica based CNTFETs and nano Li batteries, etc.