Abstract:SiC and GaN has many attractive material properties making them suitable for power electronic applications. New generations of power devices in SiC and GaN are now commercially available. In this talk, we present the recent progresses in the development of high-voltage power switching SiC and GaN rectifiers and transistors.While SiC Schottky rectifiers continue to increase in blocking voltage and current ratings, GaN Schottky rectifiers are coming into the market, claiming to have an inherent cost advantage. The commercial SiC power transistors, including JFET, MOSFET and BJT, are available. GaN power HEMTs on silicon substrates, have also been announced. We will discuss the latest advances in 4H-SiC and GaN MOS and their impact on power MOS transistor performance. Some distinct features of GaN power device development will be discussed. The issues of normally on AlGaN/GaN HEMTs will be discussed. Recent experimental demonstrations of normally off, inversion mode GaN MOSFETs and MOS Channel-HEMTs alternative technologies will be discussed. Finally, we will project the voltage and power ranges within which GaN can be competitive or superior over SiC power devices.