No.1 Title: Theory and Characteristics of Silicon Nanometer Bipolar MOSFET - the FinFET

　　 Authors: Jie Binbin and Sah Chihtang (CTSAH Associates, Florida, USA, and Physics Department, Xiamen University, China)

　　Abstract：Recent nanometer MOSFET showed unusual characteristics which we showed as due to the simultaneous presence of electron and hole channel currents.　This presentation will provide the new theory to account for this bipolar current. In addition, the previously not recognized short channel current is analyzed which showed very large increase of the channel currents. The presentation will begin with a historical survey to the theory of the transistors, starting from the 1949 Shockley p/n junction transistor containing only the minority carrier diffusion current and 1952 Shockley unipolar field-effect transistor containing only the majority carrier drift current, to 60 years later, the 2008 Sah-Jie complete transistor theory containing all eight currents: the electron and hole, drift and diffusion, and surface and bulk channel currents (2x2x2=8). The importance of contact is also delineated by defining electron, hole and electron-hole contacts which are source and sink (or drain) of the two carrier species.

　　No.2 Title: Electromigration and a New (~1980) Driftless and Electron- Windless Model

　　Authors: Sah Chihtang and Jie Binbin (CTSAH Associates, Florida, USA, and Physics Department of Xiamen University, China) and Tan Cher Ming (Nanyang Technological University, Singapore)

　　Abstract: Electromigration (EM) is the transport of host atoms in metals at high electrical current-density (>100kA/cm2) leaving behind voids or piling up hillocks, causing infinity resistance and short-circuits of adjacent interconnect lines of silicon integrated circuits (IC), which are the major failure modes of submicron and nanometer silicon IC. EM was discovered in gold wire and theoretically modeled by electron-atom momentum-transfer in 1961 by Huntington, subsequently known as the electron-wind force. For IC applications, EM was empirically modeled by the 1969-Black formula to fit the Time-To-Failure (TTF) experimental data of metal interconnect lines in ICs　using the well-known formula (at least to chemists as the Arrhenius Equation. Landauer (IBM TJ Watson Research) concluded once for all in 1989 that electron wind is untenable. This paper provides a new EM formula of only diffusion and trapping of the migrating atoms, without any electron-wind drift currents. It not only predicts the temperature and current dependence of EM observed in the last 50 years, but also provides the time dependence to enable detailed investigation of the fundamental atomic mechanisms of EM.

　　About authors：

　　Academician Prof. Sah Chihtang:

　　Sah Chihtang earned the PhD in 1956 from Stanford, then apprenticed for three years with William Shockley, the inventor of the transistors. During 1959-1964, he built up the 64-person Physics department of the Fairchild Semiconductor Research and Development Laboratory which developed the first generation silicon integrated circuit technology. Dr. Sah has taught for 50 years in American universities, including 27 years during 1961-1988 at his Alma Matter University of Illinois at Urbana-Champaign, as a Professor of Electrical and Computer Engineering and a Professor of Physics. He guided 50 PhD students in Physics and in Electrical and Computer Engineering. He also directed 50 industrial and academic postdoctoral associates and collaborators. In April 2010, Dr. Sah began his "8th Live" in an association with the Physics Department of Xiamen University in Fujian, China, on research and teaching in applied, fundamental and foundation physics. He is a academician of the US National Academy of Engineering, Chinese Academy of Sciences and Academia Sinica in Taipei. He has also been appointed an Honorary Professor of Peking, Tsinghua and Xiamen Universities, all of China. For contributions in microelectronics, he was recently recognized by National Honorary Doctorate of the People's Republic of China, on April 6, 2010 at the 89th anniversary of Xiamen University.

　　Dr. Prof. Jie Binbin:

　　Dr. Jie Binbin received the BS degree in 1986 and MS degree in 1989, both in Physics from Peking University, China; and the PhD degree in Electrical Engineering in 2000 from National University of Singapore. He was employed for 5 years by the Chartered Semiconductor Manufacturing Company in Singapore, and led its company-wide front-end reliability engineering group which was responsible for all the products delivered to the customers. He started the collaboration with Professor Sah Chihtang in 2001 via internet and joined Sah's Florida Solid-State Electronics Laboratory in 2003. From 2006 to 2009, he was a Graduate Research Professor and the Director of the Reliability Laboratory at Institute of Microelectronics, Peking University, China. Since April of 2010, he has been a Professor of the Department of Physics, Xiamen University, China.

　　Dr. Tan Cher Ming: