Title: Growth and physical properties of semipolar GaN on Si substrate

　　Speaker: Dr. Nobuhiko Sawaki（Aichi Institute of Technology, Japan）

　　Time: 9:30(AM), Dec.3, 2009

　　Venue: Academic Salon, Institute of Semiconductors, CAS

　　Abstract: One of his recent work is success in the growth of semi-polar (1-101) and (11-22) GaN as well as non-polar (11-20)GaN on patterned (001), (113), and (011) silicon substrate, respectively. The growth was performed selectively on (111) facets of the silicon prepared by an-isotropy etching process. The GaN crystal could be a planer or of micro-polyhedron with a crystal face on the top, determined by the patterning of the substrate. The dislocation density was much reduced on Si substrate. He tested doping of Si, C, Mg and Al and found that C is active to generate shallow acceptor and Mg shows high doping efficiency on (1-101)GaN. Al doping improved the crystal quality.

　　About speaker：

　　Dr. Sawaki, was born in 1945 in Japan, received his Dr.degree in semiconductor electronics at Nagoya University in 1973. Till 1989, the School of Engineering, Nagoya University as a research associate, assistant professor, and associate professor. Since 1989, he had been a full professor and engaged in research of transport and optical properties in nano-hetero-structures. Since 2001 he had been the director of the Akasaki Research Center which was established in Nagoya University after the honor of invention of blue LED, and the dean of the School of Engineering from 2004 to 2007. Now he is appointed to a Professor Emeritus of Nagoya University and moved to Aichi Institute of Technology. He has published 230 papers and patents. He has been a core member of various international conferences and in editorial board of international journals in physics of semiconductors, and is a fellow member of IOP (UK), IEEE (US), and JSAP (Japan).