Title:Past advances and future promises of GaN power devices

Speaker:Dr. Yifeng Wu

Time:14:00 PM, Dec.8, 2008

Venue:No.320 Meeting Room, Institute of Semiconductors, CAS

报告人简介：Dr. Yi-Feng Wu obtained his B.E. degree in Engineering Thermal Physics in 1985 from Tsinghua University, Beijing, China. He received his M.S. degree in Mechanical Engineering and Ph.D. degree in Electrical Engineering from University of California at Santa Barbara in 1995 and 1997, respectively. He joined Witech LLC in 1997, a successful start-up in Nitride Semiconductors which was merged with Cree in 2000. He joined Transphorm in May 2008.Dr. Wu’s has been a forefront scientist in GaN electron devices with contribution from basic device process to cutting-edge device designs and realization, from microwave devices to millimeter-wave amplifiers, from novel concept exploration to success in solving reliability problems. His pioneering work was selected into Top Developments in Microelectronics from 1997 to 1999 by Compound Semiconductor magazine. His achievements include the first demonstration of a GaN microwave power HEMT (EDL, Sept. 1996) and multiple times extending (and currently maintaining) the records for highest power densities of any solid-state field effect transistors (IEDM 1999, EDL 2004 and DRC 2006). He was recognized as the “Champion of Excellence”, the highest company honor at Cree Inc.Dr. Wu has continuous presentations in either IEEE Device Research Conference (DRC) or International Electron Device Meeting (IEDM) for the last 12 years. He served in the technical committee of the IEEE DRC from 2004 to 2006 and in International Conference on Nitride Semiconductors (ICNS) in 2007. Dr. Wu holds 10 US patents and authored many high-impact papers resulting in more than 2000 citations in Google Scholar (http://scholar.google.com/scholar?qs&q=gan+power+author:y-wu).