Date: September 25 (Fri), 2009
Venue: Capital Hotel
Language: English

Program

Chair: Guohong Wang  (Institute of Semiconductors, CAS)
09:30-09:35   Opening address
Jinmin Li (Director General, Institute of Semiconductors, CAS)
Takashi Egawa (Director,Research Center for Nano-Device and System, Nagoya Institute of Technology)
09:35-09:40   Honorary Professor Ceremony
09:45-10:10   Jicai Zhang  (Nagoya Institute of Technology)
AlGaN deep ultraviolet LED with different template,J. Zhang and T. Egawa
10:10-10:35   Zhitao Chen  (Nagoya Institute of Technology)
InAlN-based solar-blind photodiode grown by MOCVD, Z. Chen and T. Egawa
10:35-11:00   Youhua Zhu  (Nagoya Institute of Technology)
InGaN bule LED grown on 3C-SiC/Si (111), Y. Zhu and T. Egawa
11:00-11:25   Y. Aoki  (Nagoya Institute of Technology)
Electrical characterization for GaN with low energy electron irradiation,Y. Aoki, M. Kasuga, M. Kato, M. Ichimura
11:25-11:50   Kunyuan Xu  (Sun Yat-Sen University)
Study of THz oscillations in GaN-based planar nanodevices 
12:00      Lunch

Chair: Takashi EgawaNagoya Institute of Technology
13:30-13:55   Junxi Wang  (Institute of Semiconductors, CAS)
Deep-UV LEDs material growth and application
13.55-14.20   Ruifei Duan  (Institute of Semiconductors, CAS)
Performance enhancemnt of GaN LED homoepitaxy using InGaN prewells
14.20-14.45  Hongling Xiao (Institute of Semiconductors, CAS)
Research on InGaN for photovoltaic materials and devices
14.45-15.10  Qiang Hu   (Institute of Semiconductors, CAS)
HVPE grown thick GaN film on wet-etching patterned sapphire
15:10-15.30  Coffee break

Chair: Gang Wang  (Sun Yat-Sen University)
15.30-15:55  Lili Sun    (Institute of Semiconductors, CAS)
Effect of Indium Tin Oxide (ITO) on the Activation of Mg-doped GaN Films
15:55-16:20  Zhiqiang Liu   (Institute of Semiconductors, CAS)
Research on vertical structure LEDs
16:20-16:45  Hua Yang   (Institute of Semiconductors, CAS)
Investigation of GaN-based LEDs using ZnO Transparent Electrode
16:45-17:10   Meng Liang  (Institute of Semiconductors, CAS)
Thermal design of high-brightness LED module