Program

Chair: Guohong Wang (Institute of Semiconductors, CAS)
09:30-09:35　　 Opening address
Jinmin Li (Director General， Institute of Semiconductors, CAS)
Takashi Egawa (Director，Research Center for Nano-Device and System, Nagoya Institute of Technology)
09:35-09:40　　 Honorary Professor Ceremony
09:45-10:10　　 Jicai Zhang (Nagoya Institute of Technology)
AlGaN deep ultraviolet LED with different template,J. Zhang and T. Egawa
10:10-10:35　　 Zhitao Chen (Nagoya Institute of Technology)
InAlN-based solar-blind photodiode grown by MOCVD, Z. Chen and T. Egawa
10:35-11:00　　 Youhua Zhu (Nagoya Institute of Technology)
InGaN bule LED grown on 3C-SiC/Si (111), Y. Zhu and T. Egawa
11:00-11:25　　 Y. Aoki (Nagoya Institute of Technology)
Electrical characterization for GaN with low energy electron irradiation,Y. Aoki, M. Kasuga, M. Kato, M. Ichimura
11:25-11:50　 Kunyuan Xu (Sun Yat-Sen University)
Study of THz oscillations in GaN-based planar nanodevices
12:00 　　　　 Lunch

Chair: Takashi Egawa（Nagoya Institute of Technology）
13:30-13:55　　 Junxi Wang （Institute of Semiconductors, CAS）
Deep-UV LEDs material growth and application
13.55-14.20　　 Ruifei Duan （Institute of Semiconductors, CAS）
Performance enhancemnt of GaN LED homoepitaxy using InGaN prewells
14.20-14.45　 Hongling Xiao （Institute of Semiconductors, CAS）
Research on InGaN for photovoltaic materials and devices
14.45-15.10　 Qiang Hu　　（Institute of Semiconductors, CAS）
HVPE grown thick GaN film on wet-etching patterned sapphire
15:10-15.30 Coffee break

Chair: Gang Wang　 (Sun Yat-Sen University)
15.30-15:55　 Lili Sun　　　（Institute of Semiconductors, CAS）
Effect of Indium Tin Oxide (ITO) on the Activation of Mg-doped GaN Films
15:55-16:20 Zhiqiang Liu　　 (Institute of Semiconductors, CAS）
Research on vertical structure LEDs
16:20-16:45　 Hua Yang　（Institute of Semiconductors, CAS）
Investigation of GaN-based LEDs using ZnO Transparent Electrode
16:45-17:10 Meng Liang （Institute of Semiconductors, CAS）
Thermal design of high-brightness LED module