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  • Highlights of 2015 for Journal of Semiconductors
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    Update time: 2016-03-15
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    ► Redistribution of carbon atoms in Pt substrate for high quality monolayer graphene synthesis

    Li Yinying (李银英), Wu Xiaoming (伍晓明), Wu Huaqiang (吴华强) and Qian He (钱鹤)

    2015 J. Semicond. 36 013005

     A 0.8–4.2 GHz monolithic all-digital PLL based frequency synthesizer for wireless communications

    Zhao Yuanxin (赵远新), Gao Yuanpei (高源培), Li Wei (李巍), Li Ning (李宁) and Ren Junyan (任俊彦)

    2015 J. Semicond. 36 015001

    Oriented colloidal-crystal thin films of polystyrene spheres via spin coating

    S. S. Shinde and S. Park

    2015 J. Semicond. 36 023001

    A novel hybrid III–V/silicon deformed micro-disk single-mode laser

    Feng Peng (冯朋), Zhang Yejin (张冶金), Wang Yufei (王宇飞), Liu Lei (刘磊), Zhang Siriguleng (张斯日古楞),

    Wang Hailing (王海玲) and Zheng Wanhua (郑婉华)

    2015 J. Semicond. 36 024012

    Effect of Co doping on structural, optical, electrical and thermal properties of nanostructured ZnO thin films

    Sonet Kumar Saha, M. Azizar Rahman, M. R. H. Sarkar, M. Shahjahan and M. K. R. Khan

    2015 J. Semicond. 36 033004

     Electric dipole formation at high-k dielectric/SiO2 interface

    Han Kai (韩锴), Wang Xiaolei (王晓磊), Yang Hong (杨红) and Wang Wenwu (王文武)

    2015 J. Semicond. 36 036004

    GaN grown on nano-patterned sapphire substrates

    Kong Jing (孔静), Feng Meixin (冯美鑫), Cai Jin (蔡金), Wang Hui (王辉), Wang Huaibing (王怀兵) and Yang Hui (杨辉)

    2015 J. Semicond. 36 043003

    Top gate ZnO−Al2O3 thin film transistors fabricated using a chemical bath deposition technique

    Paragjyoti Gogoi, Rajib Saikia and Sanjib Changmai

    2015 J. Semicond. 36 044002

    Device parameter optimization for sub-20 nm node HK/MG-last bulk FinFETs

    Xu Miao (许淼), Yin Huaxiang (殷华湘), Zhu Huilong (朱慧珑), Ma Xiaolong (马小龙), Xu Weijia (徐唯佳),

    Zhang Yongkui (张永奎), Zhao Zhiguo (赵治国), Luo Jun (罗军), Yang Hong (杨红), Li Chunlong (李春龙),

    Meng Lingkuan (孟令款), Hong Peizhen (洪培真), Xiang Jinjuan (项金娟), Gao Jianfeng (高建峰), Xu Qiang (徐强),

    Xiong Wenjuan (熊文娟), Wang Dahai (王大海), Li Junfeng (李俊峰), Zhao Chao (赵超), Chen Dapeng (陈大鹏),

    Yang Simon (杨士宁) and Ye Tianchun (叶甜春)

    2015 J. Semicond. 36 044007

    Simulation of a high-efficiency silicon-based heterojunction solar cell

    Liu Jian (刘剑), Huang Shihua (黄仕华) and He Lü (何绿)

    2015 J. Semicond. 36 044010

    Impact of GaN transition layers in the growth of GaN epitaxial layer on silicon

    Zhao Danmei (赵丹梅), Zhao Degang (赵德刚), Jiang Desheng (江德生), Liu Zongshun (刘宗顺), Zhu Jianjun (朱建军),

    Chen Ping (陈平), Liu Wei (刘炜), Li Xiang (李翔) and Shi Ming (侍铭)

    2015 J. Semicond. 36 063003

    Hydrolysis preparation of the compact TiO2 layer using metastable TiCl4 isopropanol/water solution for inorganicorganic hybrid heterojunction perovskite solar cells

    Dai Xiaoyan (代晓艳), Shi Chengwu (史成武), Zhang Yanru (张艳茹) and Wu Ni (吴妮)

    2015 J. Semicond. 36 074003

    Monolithic integration of a 16-channel VMUX on SOI platform

    Yuan Pei (袁配), Wu Yuanda (吴远大), Wang Yue (王玥), An Junming (安俊明) and Hu Xiongwei (胡雄伟)

    2015 J. Semicond. 36 084005

    Design and fabrication of a 3.3 kV 4H-SiC MOSFET

    Huang Runhua (黄润华), Tao Yonghong (陶永洪), Bai Song (柏松), Chen Gang (陈刚), Wang Ling (汪玲), Liu Ao (刘奥),

    Wei Neng (卫能), Li Yun (李赟) and Zhao Zhifei (赵志飞)

    2015 J. Semicond. 36 094002

    Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator

    Wang Zheli (王哲力), Zhou Jianjun (周建军), Kong Yuechan (孔月婵), Kong Cen (孔岑), Dong Xun (董逊), Yang Yang (杨洋)

    and Chen Tangsheng (陈堂胜)

    2015 J. Semicond. 36 094004

    On-chip power-combining techniques for watt-level linear power amplifiers in 0.18 μm CMOS

    Ren Zhixiong (任志雄), Zhang Kefeng (张科峰), Liu Lanqi (刘览琦), Li Cong (李聪), Chen Xiaofei (陈晓飞),

    Liu Dongsheng (刘冬生), Liu Zhenglin (刘政林) and Zou Xuecheng (邹雪城)

    2015 J. Semicond. 36 095002

    Packaging investigation of optoelectronic devices

    Zhang Zhike (张志珂), Liu Yu (刘宇), Liu Jianguo (刘建国) and Zhu Ninghua (祝宁华)

    2015 J. Semicond. 36 101001

    Single event soft error in advanced integrated circuit

    Zhao Yuanfu (赵元富), Yue Suge (岳素格), Zhao Xinyuan (赵馨远), Lu Shijin (陆时进), Bian Qiang (边强), Wang Liang (王亮)

    and Sun Yongshu (孙永姝)

    2015 J. Semicond. 36 111001 

    Modeling and simulation of single-event effect in CMOS circuit

    Yue Suge (岳素格), Zhang Xiaolin (张晓林), Zhao Yuanfu (赵元富), Liu Lin (刘琳) and Wang Hanning (王汉宁)

    2015 J. Semicond. 36 111002 

    Progress in complementary metaloxidesemiconductor silicon photonics and optoelectronic integrated circuits

    Chen Hongda (陈弘达), Zhang Zan (张赞), Huang Beiju (黄北举), Mao Luhong (毛陆虹) and Zhang Zanyun (张赞允)

    2015 J. Semicond. 36 121001 

     

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