Zhang Zhike(张志珂), Liu Yu(刘宇), Liu Jianguo(刘建国), and Zhu Ninghua(祝宁华)
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract: Compared with microelectronic packaging, optoelectronic packaging as a new packaging type has been developed rapidly and it will play an essential role in optical communication. In this paper, we try to summarize the development history, research status, technology issues and future prospects, and hope to provide a meaningful reference.
Zhao Yuanfu(赵元富)1, Yue Suge(岳素格)1, 2, Zhao Xinyuan(赵馨远)1, Lu Shijin(陆时进)1, Bian Qiang(边强)1, Wang Liang(王亮)1, and Sun Yongshu(孙永姝)1
1. Beijing Microelectronics Technology Institute, Beijing 100076, China; 2. Beijing University of Aeronautics & Astronautics, Beijing 100191, China
Abstract: As technology feature sizes decrease, single event upset (SEU), and single event transient (SET) dominate the radiation response of microcircuits. Multiple bit upset (MBU) (or multi cell upset) effects, digital single event transient (DSET) and analogue single event transient (ASET) caused serious problems for advanced integrated circuits (ICs) applied in a radiation environment and have become a pressing issue. To face this challenge, a lot of work has been put into the single event soft error mechanism and mitigation schemes. This paper presents a review of SEU and SET, including: a brief historical overview, which summarizes the historical development of the SEU and SET study since their first observation in the 1970's; effects prominent in advanced technology, which reviews the effects such as MBU, MSET as well as SET broadening and quenching with the influence of temperature, device structure etc.; the present understanding of single event soft error mechanisms, which review the basic mechanism of single event generation including various component of charge collection; and a discussion of various SEU and SET mitigation schemes divided as circuit hardening and layout hardening that could help the designer meet his goals.
Yue Suge(岳素格)1, 2, Zhang Xiaolin(张晓林)1, Zhao Yuanfu(赵元富)2, and Liu Lin(刘琳)2
1. Beijing University of Aeronautics & Astronautics, Beijing 100191, China; 2. Beijing Microelectronics Technology Institute, Beijing 100076, China
Abstract: This paper reviews the status of research in modeling and simulation of single-event effects (SEE) in digital devices and integrated circuits. After introducing a brief historical overview of SEE simulation, different level simulation approaches of SEE are detailed, including material-level physical simulation where two primary methods by which ionizing radiation releases charge in a semiconductor device (direct ionization and indirect ionization) are introduced, device-level simulation where the main emerging physical phenomena affecting nanometer devices (bipolar transistor effect, charge sharing effect) and the methods envisaged for taking them into account are focused on, and circuit-level simulation where the methods for predicting single-event response about the production and propagation of single-event transients (SETs) in sequential and combinatorial logic are detailed, as well as the soft error rate trends with scaling are particularly addressed.
Chen Hongda(陈弘达)1, Zhang Zan(张赞)1, Huang Beiju(黄北举)1, Mao Luhong(毛陆虹)2, and Zhang Zanyun(张赞允)3
1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; 2. Department of Electronics and Information Engineering, Tianjin University, Tianjin 300072, China; 3. School of Electronics and Information Engineering, Tianjin Polytechnic University, Tianjin 300387, China
Abstract: Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits(OEICs) based on a complementary metal-oxide-semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems.
Chen Hongda(陈弘达)1, Wu Chunhui(吴春晖)1, Li Honglei(李洪磊)1, Chen Xiongbin(陈雄斌)1, Gao Zongyu(高宗余)1, Cui Shigang(崔世钢)2, and Wang Qin(王琴)3
1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; 2. Tianjin University of Technology and Education, Tianjin 300222, China; 3. Renmin University of China, Beijing 100872, China
Abstract: Visible light communication (VLC) is an emerging technology in optical wireless communication (OWC) that has attracted worldwide research in recent years. VLC can combine communication and illumination together, which could be applied in many application scenarios such as visible light communication local area networks (VLANs), indoor localization, and intelligent lighting. In recent years, pioneering and significant work have been made in the field of VLC. In this paper, an overview of the recent progress in VLC is presented. We also demonstrate our recent experiment results including bidirectional 100 Mbit/s VLAN or Li-Fi system based on OOK modulation without blue filter. The VLC systems that we proposed are good solutions for high-speed VLC application systems with low-cost and low-complexity. VLC technology shows a bright future due to its inherent advantages, shortage of RF spectra and ever increasing popularity of white LEDs.
Liu Bo(刘博)1, 2, Chen Xiao(陈晓)1, 2, Cai Hualin(蔡华林)1, 2, Mohammad Ali Mohammad(穆罕默德·阿里·穆罕默德)1, 2, Tian Xiangguang(田祥光)1, 2, Tao Luqi(陶璐琪)1, 2, Yang Yi(杨轶)1, 2, and Ren Tianling(任天令)1, 2
1. Institute of Microelectronics, Tsinghua University, Beijing 100084, China; 2. Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
Abstract: Surface acoustic wave (SAW) devices have been widely used in different fields and will continue to be of great importance in the foreseeable future. These devices are compact, cost efficient, easy to fabricate, and have a high performance, among other advantages. SAW devices can work as filters, signal processing units, sensors and actuators. They can even work without batteries and operate under harsh environments. In this review, the operating principles of SAW sensors, including temperature sensors, pressure sensors, humidity sensors and biosensors, will be discussed. Several examples and related issues will be presented. Technological trends and future developments will also be discussed.
Tang Kun(汤琨)1, Gu Shulin(顾书林)1, Ye Jiandong(叶建东)1, 2, Zhu Shunming(朱顺明)1, Zhang Rong(张荣)1, and Zheng Youdou(郑有炓)1
1. School of Electronic Science & Engineering, Nanjing University, Nanjing 210023, China
2. Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009, China
Abstract: The authors have reported their recent progress in the research field of ZnO materials as well as the corresponding global advance. Recent results regarding (1) the development of high-quality epitaxy techniques, (2) the defect physics and the Te/N co-doping mechanism for p-type conduction, and (3) the design, realization, and properties of the ZnMgO/ZnO hetero-structures have been shown and discussed. A complete technology of the growth of high-quality ZnO epi-films and nano-crystals has been developed. The co-doping of N plus an iso-valent element to oxygen has been found to be the most hopeful path to overcome the notorious p-type hurdle. High mobility electrons have been observed in low-dimensional structures utilizing the polarization of ZnMgO and ZnO. Very different properties as well as new physics of the electrons in 2DEG and 3DES have been found as compared to the electrons in the bulk.
Journal of Semiconductors, 2016, 37(3): 031001
8. Fabrication techniques and applications of flexible graphene-based electronic devices
Tao Luqi(陶璐琪)1, 2, Wang Danyang(王丹阳)1, 2, Jiang Song(江嵩)1, 2, Liu Ying(刘莹)1, 2, Xie Qianyi(谢谦益)1,2, Tian He(田禾)1,2, Deng Ningqin(邓宁勤)1, 2, Wang Xuefeng(王雪峰)1, 2, Yang Yi(杨轶)1, 2, and Ren Tianling(任天令)1, 2
1. Institute of Microelectronics, Tsinghua University, Beijing 100084, China
2. Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
Abstract: In recent years, flexible electronic devices have become a hot topic of scientific research. These flexible devices are the basis of flexible circuits, flexible batteries, flexible displays and electronic skins. Graphene-based materials are very promising for flexible electronic devices, due to their high mobility, high elasticity, a tunable band gap, quantum electronic transport and high mechanical strength. In this article, we review the recent progress of the fabrication process and the applications of graphene-based electronic devices, including thermal acoustic devices, thermal rectifiers, graphene-based nanogenerators, pressure sensors and graphene-based light-emitting diodes (LED). In summary, although there are still a lot of challenges needing to be solved, graphene-based materials are very promising for various flexible device applications in the future.
This paper will be published in the 2016 April Issue ofJournal of Semiconductors