Home | Contact | Sitemap | 中文 | CAS | Join Us
Search: 
Home About Us Science & Technology Scientists International Cooperation News Education & Training Societies & Journals Papers
Location: Home > Science & Technology > Research Progress
Science & Technology
  • Research Divisions
  • Research Progress
  • Supporting System
  • Achievements
  • Research Programs
  • High-Tech Industry Development
  • Research Progress
    Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers (10.04.29)
    Long rectangle resonator 1550 nm AlGaInAs/InP lasers (10.04.29)
    Self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot vertical cavity surface emitting la... (10.04.29)
    A Photovoltaic InAs Quantum-Dot Infrared Photodetector (10.04.29)
    A Low-Voltage Silicon Light Emitting Device in Standard Salicide CMOS Technology (10.04.29)
    Magnetoresistance in a nominally undoped InGaN thin film (10.04.29)
    Electron concentration dependence of exciton localization and freeze-out at local potential fluct... (10.04.29)
    Highly efficient and stable organic light-emitting diodes employing MoO3-doped perylene-3, 4, 9, ... (10.04.29)
    Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ... (10.04.18)
    Mode Simulation for Midinfrared Microsquare Resonators With Sloped Sidewalls and Confined Metals (10.04.18)
    An Accurate and Fast Behavioral Model for PLL Frequency Synthesizer Phase Noise/Spurs Prediction (10.04.18)
    An Ultra Low Power Non-volatile Memory in Standard CMOS Process for Passive RFID Tags (10.04.18)
    A Novel Architecture of Vision Chip for Fast Traffic Lane Detection and FPGA Implementation (10.04.18)
    A Novel 0.72-6.2GHz Continuously-Tunable Delta Sigma Fractional-N Frequency Synthesizer (10.04.18)
    A Simplified Soft-output QRD-M MIMO Detector (10.04.18)
    First-principles prediction of the magnetism of 3d transition-metal-doped Rocksalt MgO (10.04.18)
    FREQUENCY AND TEMPORAL COHERENCE PROPERTIES OF DISTRIBUTED BRAGG REFLECTOR LASER (10.04.18)
    Wavelength Coded Optical Time-Domain Reflectometry (10.04.18)
    Quantum Confinement Effects and Electronic Properties of SnO2 Quantum Wires and Dots (10.04.18)
    Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111... (10.04.18)
      15 Page(s)   FirstPrev1112131415
    Copyright © Institute of Semiconductors Chinese Academy of Sciences,All Right Reserved