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    Research Progress
    A simple method to realize large-bandwidth and high-efficiency wavelength conversion in Si waveguide (10.06.27)
    On detection wavelength and electron-hole wave function overlap of type II InAs/In-x Ga1-x Sb sup... (10.06.27)
    Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy (10.06.27)
    Small-Signal Equivalent-Circuit Model and Characterization of 1.55-mu m Buried Tunnel Junction Ve... (10.06.27)
    Analysis of leakage current in GaAs micro-solar cell arrays (10.05.24)
    Ultrafast photo-induced turning of magnetization and its relaxation dynamics in GaMnAs (10.05.24)
    STUDY ON MICROWAVE CYCLOTRON RESONANCE OF HIGH-MOBILITY GaAs/Al-0.35 Ga-0.65 As TWO-DIMENSIONAL E... (10.05.24)
    Electroluminescence behavior of ZnO/Si heterojunctions: Energy band alignment and interfacial mic... (10.05.24)
    Donor-donor binding in In2O3: Engineering shallow donor levels (10.05.24)
    Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure (10.05.24)
    Silicon-Based Asymmetric Add-Drop Microring Resonators with Ultra-Large Through-Port Extinctions (10.05.24)
    Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs (10.05.24)
    Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN (10.05.24)
    Blue Luminescent Properties of Silicon Nanowires Grown by a Solid-Liquid-Solid Method (10.05.24)
    Design of surface emitting distributed feedback quantum cascade laser with single-lobe far-field ... (10.05.24)
    Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photode... (10.05.24)
    Fast Discrimination of Commerical Corn Varieties Based on Near Infrared Spectra (10.05.24)
    Interference in transport through double barriers in interacting quantum wires (10.05.24)
    Broadband external cavity tunable quantum dot lasers with low injection current density (10.05.24)
    Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating (10.05.24)
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